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MITSUBISHI HVIGBT MODULES
CM1200HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM1200HC-34H
q IC ................................................................ 1200A q VCES ....................................................... 1700V q Insulated Type q 1-element in a Pack q AISiC Baseplate q Soft Reverse Recovery Diode
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130 114 570.25 570.25 4 - M8 NUTS
C C
C
C
C
20
1240.25
CM
E
E
140
30
G E E E
E C
G
CIRCUIT DIAGRAM
16.5 3 - M4 NUTS 2.5 18.5 61.5
screwing depth min. 7.7
6 - 7 MOUNTING HOLES 5
screwing depth min. 11.7
35 11 14.5
18
38 +1 0
28 +1 0
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
31.5
5
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25C VCE = 0V, Tj = 25C TC = 85C Pulse Pulse TC = 25C, IGBT part Conditions Ratings 1700 20 1200 2400 1200 2400 10400 -40 ~ +150 -40 ~ +125 -40 ~ +125 4000 10 Unit V V A A A A W C C C V s
(Note 1) (Note 1)
RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1150V, VCES 1700V, VGE = 15V Tj = 125C
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg VEC (Note 2) td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec(Note 2)
Note 1. 2. 3. 4.
Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Emitter-collector voltage Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy
Conditions VCE = VCES, VGE = 0V, Tj = 25C IC = 120mA, VCE = 10V, Tj = 25C VGE = VGES, VCE = 0V, Tj = 25C IC = 1200A, VGE = 15V, Tj = 25C IC = 1200A, VGE = 15V, Tj = 125C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25C VCC = 850V, IC = 1200A, VGE = 15V, Tj = 25C IE = 1200A, VGE = 0V, Tj = 25C (Note 4) IE = 1200A, VGE = 0V, Tj = 125C (Note 4) VCC = 850V, IC = 1200A, VGE = 15V RG(on) = 2, Tj = 125C, Ls = 100nH Inductive load VCC = 850V, IC = 1200A, VGE = 15V RG(off) = 2, Tj = 125C, Ls = 100nH Inductive load VCC = 850V, IC = 1200A, VGE = 15V RG(on) = 2, Tj = 125C, Ls = 100nH Inductive load
Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Limits Typ -- 5.5 -- 2.50 2.95 117 16.7 6.3 11.0 2.25 1.75 -- -- 400 -- -- 440 -- 350 180
Max 20 6.5 0.5 3.25 -- -- -- -- -- 2.90 -- 1.60 1.30 -- 2.70 0.80 -- 2.70 -- --
Unit mA V A V nF nF nF C V s s mJ/pulse s s mJ/pulse s C mJ/pulse
(Note 4) (Note 4)
Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150C). Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, grease = 1W/m*K Min -- -- -- Limits Typ -- -- 10.0 Max 12.0 20.0 -- Unit K/kW K/kW K/kW
MECHANICAL CHARACTERISTICS
Symbol Item Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Min 7.0 3.0 1.0 -- 600 10.0 15.0 -- Limits Typ -- -- -- 1.0 -- -- -- 18 Max 13.0 6.0 2.0 -- -- -- -- -- Unit
M -- CTI da ds LC-E(int)
Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance
N*m kg -- mm mm nH
IGBT part
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 2400 Tj = 25C VGE = 15V 2000 VGE = 20V VGE = 12V 2000 2400
TRANSFER CHARACTERISTICS (TYPICAL) VCE = 10V
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
1600
VGE = 10V
1600
1200
1200
800 VGE = 8V
800
400
400 Tj = 25C Tj = 125C
0
0
1
2
3
4
5
6
0
0
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
5 VGE = 15V
4
EMITTER-COLLECTOR VOLTAGE (V)
Tj = 25C Tj = 125C
4
3
3
2
2
1
1 Tj = 25C Tj = 125C 0 0 400 800 1200 1600 2000 2400
0
0
400
800
1200
1600
2000
2400
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CAPACITANCE CHARACTERISTICS (TYPICAL) 103
7 5 3 2
GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCC = 850V, IC = 1200A Tj = 25C 16
VGE = 0V, Tj = 25C f = 100kHz
Cies
CAPACITANCE (nF)
102
7 5 3 2
GATE-EMITTER VOLTAGE (V)
12
8
101
7 5 3 2
Coes
Cres
4
100 -1 10
23
5 7 100
23
5 7 101
23
5 7 102
0
0
4
8
12
16
COLLECTOR-EMITTER VOLTAGE (V)
GATE CHARGE (C)
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1400 VCC = 850V, VGE = 15V RG(on) = RG(off) = 2 Tj = 125C, Inductive load 2400 Eon
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 850V, IC = 1200A VGE = 15V Tj = 125C, Inductive load Eon
1200
SWITCHING ENERGIES (mJ/pulse)
1000
SWITCHING ENERGIES (mJ/pulse)
2000
1600
800 Eoff 600
1200 Eoff 800
400 Erec 200
400 Erec
0
0
400
800
1200
1600
2000
2400
0
0
4
8
12
16
20
COLLECTOR CURRENT (A)
GATE RESISTANCE ()
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 101
7 5 3 2
FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102
7 5
REVERSE RECOVERY TIME (s)
3 2
3 2
SWITCHING TIMES (s)
td(off) 100
7 5 3 2
101
7 5 3 2
103 lrr
7 5 3 2
td(on) tf
10-1
7 5 3 2
100
7 5 3 2
102
7 5
tr
trr
3 2
10-2 1 10
23
5 7 102
23
5 7 103
23
5 7 104
10-1 1 10
23
5 7 102
23
5 7 103
23
5 7 104
101
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
REVERSE BIAS SAFE OPERATING AREA (RBSOA) 3000 VCC 1150V, VGE = +/-15V Tj = 125C, RG(off) 2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2 Single Pulse, TC = 25C Rth(j-c)Q = 12K/kW Rth(j-c)R = 20K/kW
1.0
2500
COLLECTOR CURRENT (A)
0.8
2000
0.6
1500
0.4
1000
0.2
500
0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s)
0
0
500
1000
1500
2000
COLLECTOR-EMITTER VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
REVERSE RECOVERY CURRENT (A)
VCC = 850V, VGE = 15V RG(on) = RG(off) = 2 Tj = 125C, Inductive load
VCC = 850V, VGE = 15V RG(on) = RG(off) = 2 Tj = 125C, Inductive load
104
7 5

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